Graphene combines molybdenite for new flash memory

Graphene combines molybdenite for new flash memory

According to a report recently organized by the Physicist Organization Network, scientists at the Swiss Federal Institute of Technology in Lausanne have developed a prototype of a new type of flash memory by combining graphene and molybdenite (formula MoS2) with two materials that have superior electrical properties. Dimensions, flexibility and energy consumption are promising. The relevant research report was published in the recently published "American Chemical Society Nano" magazine.

Molybdenite is abundant in natural resources. Two years ago, researchers at the University’s Nanoelectronics and Structures Laboratory revealed the excellent electronic properties of this mineral. A few months later, they explained the possibility of building a highly efficient molybdenite chip. After molybdenite chips were born, molybdenite flash memory was also available. This is an important step in the application of this new material in the electronics industry.

This time, the scientists were even more creative and combined the unique electronic properties of molybdenite with the excellent conductivity of graphene to build a prototype of a new type of flash memory. It can not only store data, but it can maintain normal data storage even in the absence of power. This type of memory is an ideal "energy band" for electronic devices such as cameras, cell phones, laptops, and printers.

The prototype of the new transistor flash memory draws on the “field effect” geometry in the design, which is similar to the sandwich structure: a thin layer of molybdenite in the middle can carry electrons, and an electrode made of graphene at the bottom can deliver power to the molybdenite layer. The upper part will also contain elements made up of graphene, which helps charge trapping and data storage.

In fact, graphene and molybdenite have many common features. Both have the potential to surpass the physical limitations of existing silicon chips and electronic transistors. Each layer of chemical structure has only a single atomic thickness, which also gives them great potential for mechanical flexibility and miniaturization. Although graphene is a very good conductor, molybdenite has excellent semiconductor properties. Molybdenite has an ideal "energy zone" in its electronic structure, but graphene does not. This allows it to easily switch between "on" and "off" states and thus reduce power consumption.

Researchers say that combining these two materials will enable them to make significant advances in miniaturization, and the use of such transistors will also help to make more flexible nanoelectronic devices. Currently, the flash memory can only store a small amount of data, but because molybdenite is thinner than silicon, it is also more sensitive to charge, which will provide great possibilities for more efficient data storage. (Zhang Hao)

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